Our gallium nitride (GAN) -based materials have three breakthrough advantages over traditional silicon-based components:
1.Extreme environmental stability: -55°C to + 200°C full performance fluctuation <2% (measured data)
2.Energy efficiency revolution: Power density increased by 5 times, and satellite energy efficiency increased by 40% +
3.Signal fidelity technology: the insertion loss under the millimeter-wave frequency band is <0.15DB to ensure zero error code for inter-star communication
