Mid-wave infrared response: covers the 3-5 ΜM band, suitable for night vision devices, thermal imaging devices and remote sensing.
High quantum efficiency: more than 80% at room temperature, more stable than cadmium telluride mercury (HGCDTE).
Fast response time: about 10 NS, suitable for high-speed dynamic target detection.
High electron mobility: 33,000 CM²/V·S at 300K (8,500 CM²/V·S for GAAS), supports high frequency electronic devices, suitable for millimeter wave (30-300 GHZ) communication devices. Low defect density improves device performance
Low noise characteristics: the noise factor is less than 0.5 DB in HEMT (high electron mobility transistor), which is used for radar and satellite communication.
Advantages of zero-dimensional structure: INAS quantum dots have adjustable band gap (0.3-1.5 EV) for single photon emitters and qubits.
Spin-orbit coupling: Strong spin-orbit interaction is conducive to the construction of spin qubits and reduces decoherence effects.
Low thermal conductivity: 0.025 W/CM·K (300K), combined with high electrical conductivity, ZT value (thermoelectric value) can reach 1.5, suitable for thermoelectric power generation.
High temperature stability: the structure is stable below 400℃, which is better than traditional BI₂TE₃-based materials.
Stacked solar cells: as intermediate sub-cells (band gap 0.35 EV), they are composed of three junction cells with GAAS (1.42 EV) and GE (0.67 EV), with an efficiency of over 40%.
Laser diode: INAS quantum dot laser operates at wavelengths of 1.3-1.55 ΜM for optical fiber communication.
Diamond-Copper Thermally Conductive Composite. High thermal conductivity, tunable CTE, robust.
The DE-CW-1310 DFB EPI wafer, a high-performance epitaxial structure designed for distributed feedback (DFB) lasers operating at 1310 nm....
Ceramic thin-filmvacuum sensor Optical gas massflowmeter Liquid mass flowmeter Force sensor MEMS...
Photoelectric sensing chip Light source chips Optical transmission and modulationchips Optical detection and receptionchips...
Using a“Detach Core”which has two-layers carrier foil structure on the surface as a core, and forming...
Tenting process is a kind of subtractive process, the process as follows: Laminating photosensitive film...
Modified Semi-Added Process abbreviated as mSAP, which can be used on the core or build-up layers, pattern...
Semi-Added Process abbreviated as SAP, using on the build-up-layer pattern forming as follow：First depositing...
The product generally adopts the pressing lamination process of semi-curing sheets , and line formation...
The products generally adopt the Build-up Film Lamination process, and the circuit formation uses the...
Supports advanced nodes such as [5-22nm FinFET/BCD/GAA] to meet the needs of high-performance computing (HPC), AI chips, etc.
MPW (Multi-Project Wafer) Service: Small batch trial production to reduce customers' initial costs. Customized process development: Cooperate with customers to conduct DTCO (Design-Process Co-Optimization), customize design rules and process parameters.
We support the joint solution of "wafer foundry + advanced packaging" (such as 3D IC, heterogeneous integration) to avoid the loss of multi-supplier collaboration. Unlike pure foundries, we verify the process stability through mass production of our own chips to reduce the risk of tape-out for you.
Electronic manufacturing services and printed circuit board assembly.
EMS provides a wide range of electronic manufacturing services, including everything from circuit board design to supply chain management to assembly, testing and after-sales support.
PCBA is a link in EMS that focuses on the assembly of printed circuit boards, covering component placement, soldering and related testing, connecting electronic components to manufactured printed circuit boards.
Title: Semiconductor manufacturing processes Objective: To have a certain foundation for the overall...
