Our gallium nitride (GAN) -based materials have three breakthrough advantages over traditional silicon-based components:
1.Extreme environmental stability: -55°C to + 200°C full performance fluctuation <2% (measured data)
2.Energy efficiency revolution: Power density increased by 5 times, and satellite energy efficiency increased by 40% +
3.Signal fidelity technology: the insertion loss under the millimeter-wave frequency band is <0.15DB to ensure zero error code for inter-star communication
The SCH Series is a high-performance DAF/DDAF (Die Attach Film) designed to streamline and enhance the advanced packaging process....
The DEEPETCH DP-QPA2611 is a high-performance X-Band (8–12 GHz) Gallium Nitride (GaN) Power Amplifier...
The DEEPETCH DP-ROS-40121 is a premium, solvent-free epoxy die attach adhesive engineered for the most...
The Diamond Heat Spreader is a highly efficient thermal management material engineered for the most demanding...
Molybdenum copper composite: adjustable CTE, high conductivity, lower density than tungsten copper. No...
Tungsten copper composite: low CTE, high conductivity. Ideal for RF, power, optical packaging.
Diamond-Copper Thermally Conductive Composite. High thermal conductivity, tunable CTE, robust.
The DE-CW-1310 DFB EPI wafer, a high-performance epitaxial structure designed for distributed feedback (DFB) lasers operating at 1310 nm....
Ceramic thin-filmvacuum sensor Optical gas massflowmeter Liquid mass flowmeter Force sensor MEMS...
Photoelectric sensing chip Light source chips Optical transmission and modulationchips Optical detection and receptionchips...
