We provide an integrated solution of “materials + devices + equipment”:
Semiconductor equipment: high-precision wafer bonding machine (± 5 Μ M alignment accuracy), ceramic sintering furnace (1600℃ uniform temperature control)
Materials and devices: silicon defect density (<100CM ²) and customized loading plates
Value point: Customers can improve the efficiency of the whole process from material processing to device packaging by 40%, and the yield is stable at more than 98.5%.
Diamond-Copper Thermally Conductive Composite. High thermal conductivity, tunable CTE, robust.
The DE-CW-1310 DFB EPI wafer, a high-performance epitaxial structure designed for distributed feedback (DFB) lasers operating at 1310 nm....
Ceramic thin-filmvacuum sensor Optical gas massflowmeter Liquid mass flowmeter Force sensor MEMS...
Photoelectric sensing chip Light source chips Optical transmission and modulationchips Optical detection and receptionchips...
Using a“Detach Core”which has two-layers carrier foil structure on the surface as a core, and forming...
Tenting process is a kind of subtractive process, the process as follows: Laminating photosensitive film...
Modified Semi-Added Process abbreviated as mSAP, which can be used on the core or build-up layers, pattern...
Semi-Added Process abbreviated as SAP, using on the build-up-layer pattern forming as follow：First depositing...
The product generally adopts the pressing lamination process of semi-curing sheets , and line formation...
The products generally adopt the Build-up Film Lamination process, and the circuit formation uses the...
