Our silicon carbide (SIC) MOSFET module adopts high temperature co-fired ceramic (HTCC) packaging technology, temperature resistance of more than 200℃, thermal conductivity up to 180W / M · K, can improve the power conversion efficiency to 98% (25% higher than the traditional silicon-based devices). The volume of the cooling system is reduced by 50%, and the power consumption is reduced by 30%.
The DE-CW-1310 DFB EPI wafer, a high-performance epitaxial structure designed for distributed feedback (DFB) lasers operating at 1310 nm....
Ceramic thin-filmvacuum sensor Optical gas massflowmeter Liquid mass flowmeter Force sensor MEMS...
Photoelectric sensing chip Light source chips Optical transmission and modulationchips Optical detection and receptionchips...
Using a“Detach Core”which has two-layers carrier foil structure on the surface as a core, and forming...
Tenting process is a kind of subtractive process, the process as follows: Laminating photosensitive film...
Modified Semi-Added Process abbreviated as mSAP, which can be used on the core or build-up layers, pattern...
Semi-Added Process abbreviated as SAP, using on the build-up-layer pattern forming as follow：First depositing...
The product generally adopts the pressing lamination process of semi-curing sheets , and line formation...
The products generally adopt the Build-up Film Lamination process, and the circuit formation uses the...
Equipment features: 1. Non-destructive precision testing Micrometer-level probe contact technology...
