Our gallium nitride (GAN) -based materials have three breakthrough advantages over traditional silicon-based components:

1.Extreme environmental stability: -55°C to + 200°C full performance fluctuation <2% (measured data)

2.Energy efficiency revolution: Power density increased by 5 times, and satellite energy efficiency increased by 40% +

3.Signal fidelity technology: the insertion loss under the millimeter-wave frequency band is <0.15DB to ensure zero error code for inter-star communication

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