Our silicon carbide (SIC) MOSFET module adopts high temperature co-fired ceramic (HTCC) packaging technology, temperature resistance of more than 200℃, thermal conductivity up to 180W / M · K, can improve the power conversion efficiency to 98% (25% higher than the traditional silicon-based devices). The volume of the cooling system is reduced by 50%, and the power consumption is reduced by 30%.
The SCH Series is a high-performance DAF/DDAF (Die Attach Film) designed to streamline and enhance the advanced packaging process....
The DEEPETCH DP-QPA2611 is a high-performance X-Band (8–12 GHz) Gallium Nitride (GaN) Power Amplifier...
The DEEPETCH DP-ROS-40121 is a premium, solvent-free epoxy die attach adhesive engineered for the most...
The Diamond Heat Spreader is a highly efficient thermal management material engineered for the most demanding...
Molybdenum copper composite: adjustable CTE, high conductivity, lower density than tungsten copper. No...
Tungsten copper composite: low CTE, high conductivity. Ideal for RF, power, optical packaging.
Diamond-Copper Thermally Conductive Composite. High thermal conductivity, tunable CTE, robust.
The DE-CW-1310 DFB EPI wafer, a high-performance epitaxial structure designed for distributed feedback (DFB) lasers operating at 1310 nm....
Ceramic thin-filmvacuum sensor Optical gas massflowmeter Liquid mass flowmeter Force sensor MEMS...
Photoelectric sensing chip Light source chips Optical transmission and modulationchips Optical detection and receptionchips...
