How to solve the problem of high power consumption and heat dissipation of the third-generation of semiconductor materials in the AI server power system?

Our silicon carbide (SIC) MOSFET module adopts high temperature co-fired ceramic (HTCC) packaging technology, temperature resistance of more than 200℃, thermal conductivity up to 180W / M · K, can improve the power conversion efficiency to 98% (25% higher than the traditional silicon-based devices). The volume of the cooling system is reduced by 50%, and the power consumption is reduced by 30%.