Through AI optimization of the substrate cutting process (30% increase in wafer utilization rate of 30%) and large-scale extension molding technology, SIC wafer cost is 25% lower than that of international brands, and the price of ceramic carrier plate is only 1 / 3 that of the traditional platinum electrode solution. At the same time, the design of high thermal conductivity substrate can reduce the input of heat dissipation module and improve the comprehensive energy efficiency by 20%.
