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    Can the third-generation semiconductor material (SIC / GAN) meet the high-voltage fast charging demand for electric vehicles?

    Silicon carbide (SIC) MOSFET module adopts high temperature co-fired ceramic (HTCC) packaging technology, withstand voltage level of more than 1200V, with low conduction resistance (RDS (ON) <5 MΩ), the charging efficiency of 800V high voltage platform of electric vehicles can be increased to 98%, and the charging time can be shortened by 40%. The vehicle range is increased by 12%, and the volume of the battery thermal management system is reduced by 35%.

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