The DEEPETCH DP-QPA2611 is a high-performance X-Band (8–12 GHz) Gallium Nitride (GaN) Power Amplifier MMIC, manufactured using an advanced 0.15μm GaN-on-SiC process. Delivering a saturated output power of 5W (>37 dBm) with exceptional power-added efficiency (PAE >42%), it is the ideal building block for next-generation Active Electronically Scanned Arrays (AESA). Housed in a compact 5×5 mm QFN package, it features integrated DC blocking capacitors at the I/O ports and 50Ω internal matching, drastically simplifying external circuitry and reducing the overall size of phased array T/R modules.
(Note: The DP-QPA261x family also includes DP-QPA2610 (3W) and DP-QPA2612 (12W). Datasheet specifications are based on pulsed conditions. For CW operation, proper derating and enhanced thermal management are required.)
• QGaN15 GaN-on-SiC process , wideband X-band, suitable for phased array T/R modules.
• Integrated DC blocking capacitors, simplifying external matching circuits and reducing phased array face size.
• High PAE, reducing array power consumption and thermal stress.
• Evaluation board available: DP-QPA2611EVB.
| Item | Specification |
| Frequency Band | 8 ~ 12 GHz (X-Band) |
| Saturated Output Power (Psat) | 5 W (>37 dBm), P1dB ≈ 38 dBm |
| Small-Signal Gain | 26 dB (Typical), up to 35 dB under certain conditions |
| Drain Voltage (Vd) | 24 V |
| Quiescent Drain Current (Idq) | 105 mA |
| PAE | > 42% |
| Package | 5×5 mm QFN, 24-pin, I/O ports integrated DC blocking capacitors, 50Ω matched |
| Gate Voltage Range (Vg) | −4V ~ 0V (Negative gate bias) |
| Storage Temperature | −55 ~ +150℃; MSL3 |
• X-Band Active Electronically Scanned Array (AESA) radar
• Electronic warfare jamming sources
• X-Band satellite communications, point-to-point microwave communications
The DEEPETCH DP-QPA2611 is a high-performance X-Band (8–12 GHz) Gallium Nitride (GaN) Power Amplifier...
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